(China (Mainland))
Product Summary
The CSD17310Q5A is a power MOSFET. It has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The applications of the CSD17310Q5A are (1)Notebook Point of Load; (2)Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems; (3)Optimized for Synchronous FET Applications.
Parametrics
CSD17310Q5A absolute maximum ratings: (1)VDS Drain to Source Voltage: 30 V; (2)VGS Gate to Source Voltage: +10 / –8 V; (3)Continuous Drain Current: 100 A; (4)ID, Continuous Drain Current: 21 A; (5)IDM Pulsed Drain Current: 134 A; (6)PD Power Dissipation: 3.1 W; (7)TJ, Operating Junction and Storage: –55 to 150℃.
Features
CSD17310Q5A features: (1)Optimized for 5V Gate Drive; (2)Ultralow Qg and Qgd; (3)Low Thermal Resistance; (4)Avalanche Rated; (5)Pb Free Terminal Plating; (6)RoHS Compliant; (7)Halogen Free; (8)SON 5-mm × 6-mm Plastic Package.
Diagrams
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 CSD17310Q5A |
Texas Instruments |
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