TPS650245RHBT

Product Summary

The TPS650245RHBT is an integrated Power Management IC for applications powered by one Li-Ion or Li-Polymer cell, which requires multiple power rails. The TPS650245RHBT provides three highly efficient, step-down converters targeted at providing the core voltage, peripheral, I/O and memory rails in a processor based system. All three step-down converters enter a low power mode at light load for maximum efficiency across the widest possible range of load currents. The applications of the TPS650245RHBT include PDA, Cellular/Smart Phone, GPS, Digital Still Camera, Split Supply DSP and μ P Solutions: Samsung, ARM-Based Processors, etc.

Parametrics

TPS650245RHBT absolute maximum ratings: (1)Input voltage range on all pins except A/PGND pins with respect to AGND: -0.3 to 7 V; (2)Current at VINDCDC1, L1, PGND1, VINDCDC2, L2, PGND2, VINDCDC3, L3, PGND3: 2000 mA; (3)Peak Current at all other pins: 1000 mA; (4)Continuous total power dissipation: See Dissipation Rating Table; (5)TA, Operating free-air temperature: -40 to 85℃; (6)TJ, Maximum junction temperature: 125℃; (7)Tst, Storage temperature: -65 to 150℃; (8)Lead temperature 1,6 mm (1/16-inch) from case for 10 seconds: 260℃.

Features

TPS650245RHBT features: (1)1.6A, 1.0A or 0.8A, 97% Efficient Step-Down Converter for System Voltage (VDCDC1), 3.3V or 2.80V or Adjustable; (2)1.6A, 1.0A or 0.8A, up to 95% Efficient Step-Down Converter for Memory Voltage, 1.8V or 2.5V or Adjustable; (3)0.8A, 90% Efficient Step-Down Converter for Processor Core (VDCDC3); (4)Two Selectable Voltages for VDCDC3, DEFDCDC3= LOW: VO = 0.99V; DEFDCDC3= HIGH: VO = 1.1V; (5)30mA LDO for Vdd_alive; (6)2 × 200mA General Purpose LDOs (LDO1 andpin QFN package (RHB).LDO2); (7)Dynamic Voltage Management for ProcessorCore; (8)LDO1 and LDO2 Voltage Externally Adjustable; (9)Separate Enable Pins for Inductive Converters; (10)2.25MHz Switching Frequency; (11)85μA Quiescent Current; (12)Thermal Shutdown Protection.

Diagrams