SGA-1263Z

SGA-1263Z, SiGe HBT amplifier, SOT, 20mA, 5V, -12dBm, RF Micro Devices

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Price:: US $0.41~0.97 / piece [Get Latest Price]

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	US $0.41~0.97

PartNumber:: SGA-1263Z

Brand:: RF Micro Devices - RFMD | Pack: SOT | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-09

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Part Number:SGA-1263Z
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Product Summary

The SGA-1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO＞7V. The SGA-1263Z has less than 1dB gain drift over 125℃ operating range (-40℃ to +85℃) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM, and narrowband PCS bands. The applications of the SGA-1263Z include Buffer Amplifier for Oscillator Applications, Broadband Gain Blocks, IF Amp.

Parametrics

SGA-1263Z absolute maximum ratings: (1)Max Device Current (ID): 20mA; (2)Max Device Voltage (VD): 5V; (3)Max RF Input Power: -12dBm; (4)Max Junction Temperature (TJ): +150℃; (5)Operating Temperature Range (TL): -40 to +85℃; (6)Max Storage Temperature: +150℃.

Features

SGA-1263Z features: (1)DCto4000MHz Operation; (2)Single Supply Voltage; (3)Excellent Isolation, ＞50dB at 900MHz; (4)50Ω In/Out, Broadband Match for Operation from DC-4GHz; (5)Unconditionally Stable.