RF2173

RF2173, high power, high efficiency power amplifier, DIP, -0.5 to 3V, 13dBm, 50%, RF Micro Devices

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Price:: US $2.10~4.88 / piece [Get Latest Price]

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	US $2.10~4.88

PartNumber:: RF2173

Brand:: RF Micro Devices - RFMD | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-09

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Part Number:RF2173
US $2.10 - 4.88
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Product Summary

The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The RF2173 is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2173 can be used together with the RF2174 for dual-band operation. The RF2173 is packaged in an ultra-small plastic package, minimizing the required board space. The applications of the RF2173 include 3V GSM Cellular Handsets, 3V Dual-Band/Triple-Band Handsets, GPRS Compatible, Commercial and Consumer Systems, Portable Battery-Powered Equipment.

Parametrics

RF2173 absolute maximum ratings: (1)Supply Voltage: -0.5 to +6.0 VDC; (2)Power Control Voltage (VAPC): -0.5 to +3.0 V; (3)DC Supply Current: 2400 mA; (4)Input RF Power: +13 dBm; (5)Duty Cycle at Max Power: 50 %; (6)Output Load VSWR: 10:1; (7)Operating Case Temperature: -40 to +85℃; (8)Storage Temperature: -55 to +150℃.

Features

RF2173 features: (1)Single 2.7V to 4.8V Supply Voltage; (2)+36dBm Output Power at 3.5V; (3)32dB Gain with Analog Gain Control; (4)56% Efficiency; (5)800MHz to 950MHz Operation; (6)Supports GSM and E-GSM.