(China (Mainland))
Product Summary
The RF2126TR7 is a high-power, high-efficiency, linear amplifier IC. The RF2126TR7 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The applications of the RF2126TR7 are 2.5GHz ISM Band Applications, Digital Communication Systems, PCS Communication Systems, Commercial and Consumer Systems and Portable Battery-Powered Equipment.
Parametrics
RF2126TR7 absolute maximum ratings: (1)Supply Voltage (VCC): -0.5 to +7.5 VDC; (2)Power Control Voltage (VPC): -0.5 to+5V; (3)DC Supply Current: 450 mA; (4)Input RF Power: +20 dBm; (5)Output Load VSWR: 20:1; (6)Operating Ambient Temperature: -40 to +85℃; (7)Storage Temperature: -40 to +100℃.
Features
RF2126TR7 features: (1)Single 3V to 6.5V Supply; (2)1.3W Output Power; (3)12dBGain; (4)45% Efficiency; (5)Power Down Mode; (6)1800MHz to 2500MHz Operation.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 RF2126TR7 |
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IC AMP HBT GAAS 2.5GHZ 8-SOIC |
Data Sheet |
Negotiable |
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