Product Summary
The MJL21194 is an NPN audio Bipolar silicon power transistor which utilizes Perforated Emitter technology for high power audio output, disk head positioners and linear applications.
Parametrics
MJL21194 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 250 Vdc; (2)Collector-Base Voltage VCBO: 400 Vdc; (3)Emitter-Base Voltage VEBO: 5 Vdc; (4)Collector-Emitter Voltage - 1.5 V VCEX: 400 Vdc; (5)Collector Current- Continuous: 16 Adc; (6)Collector Current-Peak: 30 Adc; (7)Base Current- Continuous IB: 5 Adc; (8)Total Power Dissipation @ TC = 25℃: 20 0W; (9)Derate above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range: -65 to +150℃.
Features
MJL21194 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain-hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 2.25 A, 80 V, 1 Second; (5)These are Pb?Free Devices.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MJL21194 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W NPN |
Data Sheet |
Negotiable |
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MJL21194G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W NPN |
Data Sheet |
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