(China (Mainland))
Product Summary
The IXFL100N50P is a Power MOSFET.
Parametrics
IXFL100N50P absolute maximum ratings: (1)VDSS: 500 V; (2)VDGR: 500 V; (3)VGSS: ±30 V; (4)VGSM: ±40 V; (5)ID25: 70A; (6)IDM: 250 A; (7)IAR: 100 A; (8)TJ: -55 to +150℃; (9)TJM: 150℃; (10)Tstg: -55 to +150℃.
Features
IXFL100N50P features: (1)International standard isolated package; (2)UL recognized package; (3)Silicon chip on Direct-Copper-Bond substrate; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance- easy to drive and to protect; (6)Fast intrinsic diode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFL100N50P |
Ixys |
MOSFET tbd Amps 500V 0.06 Ohms Rds |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXFL100N50P |
Ixys |
MOSFET tbd Amps 500V 0.06 Ohms Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFL38N100Q2 |
Ixys |
MOSFET Q2-Class HiperFET 1000, 22A |
Data Sheet |
Negotiable |
|
||||
|
IXFL44N100P |
Ixys |
MOSFET 44 Amps 1000V 0.22 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFL60N80P |
Ixys |
MOSFET 42 Amps 800V 0.15 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFL55N50 |
Ixys |
MOSFET 55 Amps 500V 0.08W Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFL60N60 |
Ixys |
MOSFET 60 Amps 600V 0.08W Rds |
Data Sheet |
Negotiable |
|
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