HMC636ST89E

wideband Gain Block Amplifier, SOT, 1A, 0.86 W, +5.5 Volts

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Price:: US $0.75~1.78 / piece [Get Latest Price]

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	US $0.75~1.78

PartNumber:: HMC636ST89E

Brand:: Hittite Microwave Corporation - Hittite | Pack: SOT | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-09

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Product Summary

The HMC636ST89E is a GaAs pHemT, High linearity, low noise, wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. packaged in an industry standard soT89, the HMC636ST89E can be used as either a cascadable 50 ohm gain stage, a pA pre-Driver, a low noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any pCB material or thickness. The applications of the HMC636ST89E are (1)Cellular / PCS / 3G; (2)WiMAX, WiBro, & Fixed Wireless; (3)CATV & Cable Modem; (4)Microwave Radio.

Parametrics

HMC636ST89E absolute maximum ratings: (1)Collector Bias Voltage (Vcc): +5.5 Volts; (2)rf input power (rfin)(Vcc = +5 Vdc): +16 dBm; (3)Channel Temperature: 150℃; (4)Continuous pdiss: 0.86 W; (5)Thermal resistance: 75.6℃/W; (6)storage Temperature: -65 to +150℃; (7)operating Temperature: -40 to +85℃; (8)esD sensitivity (HBm) Class: 1A.

Features

HMC636ST89E features: (1)low noise figure: 2.2 dB; (2)High p1dB output power: +22 dBm; (3)High output ip3: +40 dBm; (4)Gain: 13 dB; (5)50 ohm i/os - no external matching; (6)industry standard soT89 package.