(China (Mainland))
Product Summary
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device HGTG11N120CND has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The HGTG11N120CND is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Parametrics
HGTG11N120CND absolute maximum ratings: (1)Collector to Emitter Voltage: BVCES 1200 V; (2)Collector Current Continuous At TC = 25℃,IC25: 43 A; At TC = 110℃, IC110: 22 A; (3)Collector Current Pulsed, ICM: 80 A; (4)Gate to Emitter Voltage Continuous, VGES: ±20 V; (5)Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area at TJ = 150℃, SSOA: 55A at 1200V; (7)Power Dissipation Total at TC = 25℃, PD: 298 W; (8)Power Dissipation Derating TC > 25℃: 2.38 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to 150℃; (10)Maximum Lead Temperature for Soldering, TL: 260 ℃.
Features
HGTG11N120CND features: (1)43A, 1200V, TC = 25℃; (2)1200V Switching SOA Capability; (3)Typical Fall Time: 340ns at TJ = 150oC; (4)Short Circuit Rating; (5)Low Conduction Loss; (6)Thermal Impedance SPICE Model.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 HGTG11N120CND |
Fairchild Semiconductor |
IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
HGTG10N120BN |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
HGTG10N120BND |
Fairchild Semiconductor |
IGBT Transistors 35A 1200V N-Ch |
Data Sheet |
|
|
||||||||||||
|
HGTG10N120BND_Q |
Fairchild Semiconductor |
IGBT Transistors 35A 1200V N-Ch |
Data Sheet |
Negotiable |
|
||||||||||||
|
HGTG11N120CN |
Fairchild Semiconductor |
IGBT Transistors 43A 1200V N-Ch |
Data Sheet |
|
|
||||||||||||
|
HGTG11N120CND |
Fairchild Semiconductor |
IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde |
Data Sheet |
|
|
||||||||||||
|
HGTG12N60A4 |
Fairchild Semiconductor |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
Data Sheet |
|
|
||||||||||||
