(China (Mainland))
Product Summary
The FDC638APZ is a P-Channel 2.5V PowerTrench Specified MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDC638APZ is well suited for battery power.The applications of the FDC638APZ are load switching and power management, battery charging circuits, and DC/DC conversion.
Parametrics
FDC638APZ absolute maximum ratings: (1)Drain-Source Voltage:–20V ; (2)Gate-Source Voltage:±8V ; (3)Drain Current: Continuous:-4.5A, Pulsed:-20A; (4)Power Dissipation for Single Operation:1.6W or 0.8W; (5)Operating and Storage Junction Temperature Range:–55℃ to +150℃.
Features
FDC638APZ features: (1)-4.5A, -20V. RDS(ON)=48mW @ VGS=-4.5V, RDS(ON)=65mW @ VGS=-2.5V ; (2)Low gate charge (10 nC typical) ; (3)High performance trench technology for extremely ; (4)low RDS(ON) ; (5)SuperSOT–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) .
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDC638APZ |
Fairchild Semiconductor |
MOSFET -20V P-Channel 2.5V PowerTrench MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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FDC602P |
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MOSFET P-Ch PowerTrench Specified 2.5V |
Data Sheet |
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MOSFET -20V -5.5A P-CH POWERTRENCH |
Data Sheet |
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