Product Summary
The CSD16407Q5 is a power MOSFET. It has been designed to minimize losses in power conversion applications. The applications of the CSD16407Q5 are (1)Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems; (2)Optimized for Synchronous FET Applications.
Parametrics
CSD16407Q5 absolute maximum ratings: (1)VDS Drain-to-source voltage: 25 V; (2)VGS Gate-to-source voltage: +16 /–12 V; (3)Continuous drain current:C 100 A; (4)ID, Continuous drain current: 31 A; (5)IDM Pulsed drain current: 200 A; (6)PD Power dissipation: 3.1 W; (7)TJ, Operating junction and storage temperature: –55 to 150℃.
Features
CSD16407Q5 features: (1)Ultralow Qg and Qgd; (2)Low Thermal Resistance; (3)Avalanche Rated; (4)SON 5-mm × 6-mm Plastic Package.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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CSD16407Q5 |
Texas Instruments |
MOSFET N-Ch NexFET Power MOSFETs |
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CSD16407Q5C |
Texas Instruments |
MOSFET DualCool N-Channel NexFET Power MOSFET |
Data Sheet |
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