Product Summary

The AT-32033-TR1G is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033-TR1G places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

Parametrics

AT-32033-TR1G absolute maximum ratings: (1)VEBO Emitter-Base Voltage: 1.5V; (2)VCBO Collector-Base Voltage: 11V; (3)VCEO Collector-Emitter Voltage: 5.5V; (4)IC Collector Current: 32mA; (5)PT Power Dissipation: 200mW; (6)Tj Junction Temperature: 150℃; (7)TSTG Storage Temperature: -65 to 150℃.

Features

AT-32033-TR1G features: (1)High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation; (2)900 MHz Performance; (3)Characterized for End-Of- Life Battery Use (2.7 V); (4)SOT-23 and SOT-143 SMT Plastic Packages; (5)Tape-And-Reel Packaging Option Available.

Diagrams

AT-32033-TR1G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AT-32033-TR1G
AT-32033-TR1G

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